npn bd136 ? bd138 ? BD140 15/10/2012 comset semiconductors 1 | 3 silicon planar epitaxial power transistors. the bd136-bd138-BD140 are pnp transistors they are recommended for driver stages in hi-fi amplifiers and television circuits. they are mounted in jedec to-126 plastic package. npn complements are bd135-bd137-bd139. compliance to rohs. absolute maximum ratings symbol ratings value unit -v cbo collector-base voltage (i e = 0) bd135 45 v bd137 60 bd139 100 -v ceo collector-emitter voltage (i b = 0) bd135 45 v bd137 60 bd139 80 -v cer collector-emitter voltage (r be = 1 k ?) bd135 45 v bd137 60 bd139 100 -v ebo emitter-base voltage (i e = 0) 5 v -i c collector current -i c 1.5 a -i cm 2 -i b base current 0.5 a p t total power dissipation @ t mb = 70c 8 watts t j junction temperature 150 c t st g storage temperature -65 to +150 c thermal characteristics symbol ratings value unit r thj-mb thermal resistance, junction to mouting base 10 k/w r thj-a thermal resistance, junction to ambient in free air 100 k/w
npn bd136 ? bd138 ? BD140 15/10/2012 comset semiconductors 2 | 3 electrical characteristics tc=25c unless otherwise noted symbol ratings test condition(s) min typ max unit -i cbo collector cut-off current i e =0, -v cb = 30 v bd135 - - 0,1 a bd137 - - 0,1 bd139 - - 0,1 i e =0, -v cb = 30v t j = 125c bd135 - - 10 bd137 - - 10 bd139 - - 10 -i ebo emitter cut-offcurrent i c =0, -v eb =5 v - - 10 a -v ceo(sus) collector-emitter sustaning voltage (*) i b =0, -i c =30 ma bd135 45 - - v bd137 60 - - bd139 80 - - -v ce(sat) collector-emitter saturation voltage (*) -i c =0.5 a, -i b =50 ma - - 0,5 v h fe dc current gain (*) -v ce =2 v, -i c =5 ma 25 - - -v ce =2 v -i c =150 ma bdxxx 40 - 250 bdxxx -10 63 - 160 bdxxx -16 100 - 250 -v ce =2 v, -i c =500 ma 25 - - -v be base-emitter voltage(*) -v ce =2 v, -i c =500 ma - - 1 v f t transition frequency -v ce =5 v, -i c =50 ma f= 35 mhz - 75 - mhz (*) measured under pulse conditions : t p <300s, <2%.
npn bd136 ? bd138 ? BD140 15/10/2012 comset semiconductors 3 | 3 mechanical data case to-126 revised august 2012 ????????? ? information furnished is believed to be accurate and reliable. ho wever, comset semic onductors assumes no responsibility for the consequences of use of such information nor for any infr ingement of patents or other rights of th ird parties which may results from its use. data are subject to change without notice. comset semiconductors makes no warranty, representation or guarantee regar ding the suitability of its pr oducts for any particular purpose, nor does comset semiconductors assume any li ability arising out of the application or use of any product an d specifically disclaims any and all liability, including without limitation co nsequential or incidental damages. comset semiconductors? produ cts are not authorized for use as critical compone nts in life support devices or systems. ? ? www.comsetsemi.com info@comsetsemi.com dimensions min max a 7.4 7.8 b 10.5 10.8 c 2.4 2.7 d 0.7 0.9 e 2.25 typ. f 0.49 0.75 g 4.4 typ. l 15.7 typ. m 1.27 typ. n 3.75 typ. p 3.0 3.2 s 2.54 typ. pin 1 : emitter pin 2 : collector pin 3 : base
|
